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Article: Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure

TitleEffect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure
Authors
KeywordsControl oxide
Silicon dioxide
Plasma oxidation
Nanocrystalline silicon
Issue Date2008
Citation
Wuli Xuebao/Acta Physica Sinica, 2008, v. 57, n. 7, p. 4482-4486 How to Cite?
AbstractThe silicon dioxide (SiO2) film was fabricated from layer-by-layer depositing amorphous silicon (a-Si) film combined with step-by-step plasma oxidation in the plasma-enhanced chemical vapor deposition (PECVD) system. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics show that the fixed charge and interface state densities of the SiO2 film are 9 × 1011 cm-2 and 2 × 1011 cm-2·eV-1, respectively. Furthermore, the breakdown field strength is as high as 4.6 MV/cm, which is comparable to that formed by hot oxidation. The prepared SiO2 is employed as control oxide in nc-Si based double-barrier floating gate memory structure and is found to be an effective way to prevent the charge exchange between the gate electrode and nc-Si, which also lead to an enhancement in the retention time. The improved performance of the memory is discussed and is ascribe to the moderate-thickness of SiO2 as well as its excellent electrical properties.
Persistent Identifierhttp://hdl.handle.net/10722/265544
ISSN
2023 Impact Factor: 0.8
2023 SCImago Journal Rankings: 0.214

 

DC FieldValueLanguage
dc.contributor.authorDing, Hong Lin-
dc.contributor.authorLiu, Kui-
dc.contributor.authorWang, Xiang-
dc.contributor.authorFang, Zhong Hui-
dc.contributor.authorHuang, Jian-
dc.contributor.authorYu, Lin Wei-
dc.contributor.authorLi, Wei-
dc.contributor.authorHuang, Xin Fan-
dc.contributor.authorChen, Kun Ji-
dc.date.accessioned2018-12-03T01:20:58Z-
dc.date.available2018-12-03T01:20:58Z-
dc.date.issued2008-
dc.identifier.citationWuli Xuebao/Acta Physica Sinica, 2008, v. 57, n. 7, p. 4482-4486-
dc.identifier.issn1000-3290-
dc.identifier.urihttp://hdl.handle.net/10722/265544-
dc.description.abstractThe silicon dioxide (SiO2) film was fabricated from layer-by-layer depositing amorphous silicon (a-Si) film combined with step-by-step plasma oxidation in the plasma-enhanced chemical vapor deposition (PECVD) system. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics show that the fixed charge and interface state densities of the SiO2 film are 9 × 1011 cm-2 and 2 × 1011 cm-2·eV-1, respectively. Furthermore, the breakdown field strength is as high as 4.6 MV/cm, which is comparable to that formed by hot oxidation. The prepared SiO2 is employed as control oxide in nc-Si based double-barrier floating gate memory structure and is found to be an effective way to prevent the charge exchange between the gate electrode and nc-Si, which also lead to an enhancement in the retention time. The improved performance of the memory is discussed and is ascribe to the moderate-thickness of SiO2 as well as its excellent electrical properties.-
dc.languageeng-
dc.relation.ispartofWuli Xuebao/Acta Physica Sinica-
dc.subjectControl oxide-
dc.subjectSilicon dioxide-
dc.subjectPlasma oxidation-
dc.subjectNanocrystalline silicon-
dc.titleEffect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-48049116181-
dc.identifier.volume57-
dc.identifier.issue7-
dc.identifier.spage4482-
dc.identifier.epage4486-
dc.identifier.issnl1000-3290-

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