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Article: Nanometrology of field gradient using donor spins in silicon
Title | Nanometrology of field gradient using donor spins in silicon |
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Authors | |
Keywords | AC modulation donor location field gradient hyperfine interaction nanometrology silicon |
Issue Date | 2018 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm |
Citation | Journal of Physics: Condensed Matter, 2018, v. 30 n. 42, p. 425301 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/263393 |
ISSN | 2023 Impact Factor: 2.3 2023 SCImago Journal Rankings: 0.676 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Gong, P | - |
dc.contributor.author | PANG, H | - |
dc.contributor.author | Yu, H | - |
dc.contributor.author | Yao, W | - |
dc.date.accessioned | 2018-10-22T07:38:11Z | - |
dc.date.available | 2018-10-22T07:38:11Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Journal of Physics: Condensed Matter, 2018, v. 30 n. 42, p. 425301 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10722/263393 | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm | - |
dc.relation.ispartof | Journal of Physics: Condensed Matter | - |
dc.rights | Journal of Physics: Condensed Matter. Copyright © Institute of Physics Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | AC modulation | - |
dc.subject | donor location | - |
dc.subject | field gradient | - |
dc.subject | hyperfine interaction | - |
dc.subject | nanometrology | - |
dc.subject | silicon | - |
dc.title | Nanometrology of field gradient using donor spins in silicon | - |
dc.type | Article | - |
dc.identifier.email | Gong, P: pugong@hku.hk | - |
dc.identifier.email | Yu, H: yuhongyi@hku.hk | - |
dc.identifier.email | Yao, W: wangyao@hku.hk | - |
dc.identifier.authority | Yu, H=rp02112 | - |
dc.identifier.authority | Yao, W=rp00827 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/1361-648X/aae009 | - |
dc.identifier.scopus | eid_2-s2.0-85054403388 | - |
dc.identifier.hkuros | 293935 | - |
dc.identifier.volume | 30 | - |
dc.identifier.issue | 42 | - |
dc.identifier.spage | 425301 | - |
dc.identifier.epage | 425301 | - |
dc.identifier.isi | WOS:000446182700001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0953-8984 | - |