File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1016/j.matchemphys.2014.07.037
- Scopus: eid_2-s2.0-84908208451
- WOS: WOS:000342525100031
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: First-principles investigation of negative thermal expansion in II-VI semiconductors
Title | First-principles investigation of negative thermal expansion in II-VI semiconductors |
---|---|
Authors | |
Keywords | ab initio calculations Semiconductors Thermal expansion Thermal properties |
Issue Date | 2014 |
Citation | Materials Chemistry and Physics, 2014, v. 148, n. 1-2, p. 214-222 How to Cite? |
Abstract | © 2014 Elsevier B.V. All rights reserved. Within the framework of first-principles, all II-VI semiconductors with cubic zinc blende structure have negative thermal expansion (NTE) behavior at low temperatures. Negative mode Grüneisen parameters are found for two transverse acoustic (TA) branches near the Brillouin-zone boundaries. Through the analysis of vibrational modes, it shows that the librational mode which brings about the bond tension effect by atomic motions perpendicular to the bonds can contribute to the NTE. Related thermodynamic properties of II-VI semiconductors have also been studied. It is demonstrated that with increased ionic radius and atomic mass, the variety of electronegativity can cause more covalent character in bonding nature, weaker interatomic force constants and lower frequencies in lattice vibrations. Thus, despite the same vibrational modes, II-VI semiconductors can present different NTE behavior and thermodynamic properties. |
Persistent Identifier | http://hdl.handle.net/10722/262965 |
ISSN | 2023 Impact Factor: 4.3 2023 SCImago Journal Rankings: 0.769 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Lei | - |
dc.contributor.author | Yuan, Peng Fei | - |
dc.contributor.author | Wang, Fei | - |
dc.contributor.author | Sun, Qiang | - |
dc.contributor.author | Guo, Zheng Xiao | - |
dc.contributor.author | Liang, Er Jun | - |
dc.contributor.author | Jia, Yu | - |
dc.date.accessioned | 2018-10-08T09:28:57Z | - |
dc.date.available | 2018-10-08T09:28:57Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Materials Chemistry and Physics, 2014, v. 148, n. 1-2, p. 214-222 | - |
dc.identifier.issn | 0254-0584 | - |
dc.identifier.uri | http://hdl.handle.net/10722/262965 | - |
dc.description.abstract | © 2014 Elsevier B.V. All rights reserved. Within the framework of first-principles, all II-VI semiconductors with cubic zinc blende structure have negative thermal expansion (NTE) behavior at low temperatures. Negative mode Grüneisen parameters are found for two transverse acoustic (TA) branches near the Brillouin-zone boundaries. Through the analysis of vibrational modes, it shows that the librational mode which brings about the bond tension effect by atomic motions perpendicular to the bonds can contribute to the NTE. Related thermodynamic properties of II-VI semiconductors have also been studied. It is demonstrated that with increased ionic radius and atomic mass, the variety of electronegativity can cause more covalent character in bonding nature, weaker interatomic force constants and lower frequencies in lattice vibrations. Thus, despite the same vibrational modes, II-VI semiconductors can present different NTE behavior and thermodynamic properties. | - |
dc.language | eng | - |
dc.relation.ispartof | Materials Chemistry and Physics | - |
dc.subject | ab initio calculations | - |
dc.subject | Semiconductors | - |
dc.subject | Thermal expansion | - |
dc.subject | Thermal properties | - |
dc.title | First-principles investigation of negative thermal expansion in II-VI semiconductors | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.matchemphys.2014.07.037 | - |
dc.identifier.scopus | eid_2-s2.0-84908208451 | - |
dc.identifier.volume | 148 | - |
dc.identifier.issue | 1-2 | - |
dc.identifier.spage | 214 | - |
dc.identifier.epage | 222 | - |
dc.identifier.isi | WOS:000342525100031 | - |
dc.identifier.issnl | 0254-0584 | - |