File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.4807888
- Scopus: eid_2-s2.0-84879081777
- WOS: WOS:000320621600066
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: A ballistic pn junction in suspended graphene with split bottom gates
| Title | A ballistic pn junction in suspended graphene with split bottom gates |
|---|---|
| Authors | |
| Issue Date | 2013 |
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
| Citation | Applied Physics Letters, 2013, v. 102 n. 22, article no. 223102 How to Cite? |
| Abstract | We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 μm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of high quality graphene nanostructures. © 2013 AIP Publishing LLC. |
| Persistent Identifier | http://hdl.handle.net/10722/262838 |
| ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Grushina, Anya L. | - |
| dc.contributor.author | Ki, Dong Keun | - |
| dc.contributor.author | Morpurgo, Alberto F. | - |
| dc.date.accessioned | 2018-10-08T02:47:13Z | - |
| dc.date.available | 2018-10-08T02:47:13Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Applied Physics Letters, 2013, v. 102 n. 22, article no. 223102 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/262838 | - |
| dc.description.abstract | We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 μm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of high quality graphene nanostructures. © 2013 AIP Publishing LLC. | - |
| dc.language | eng | - |
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
| dc.relation.ispartof | Applied Physics Letters | - |
| dc.title | A ballistic pn junction in suspended graphene with split bottom gates | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1063/1.4807888 | - |
| dc.identifier.scopus | eid_2-s2.0-84879081777 | - |
| dc.identifier.volume | 102 | - |
| dc.identifier.issue | 22 | - |
| dc.identifier.spage | article no. 223102 | - |
| dc.identifier.epage | article no. 223102 | - |
| dc.identifier.isi | WOS:000320621600066 | - |
| dc.identifier.issnl | 0003-6951 | - |