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Article: Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors

TitleElectrically induced 2D half-metallic antiferromagnets and spin field effect transistors
Authors
Keywords2D materials
2D magnetism
half metallicity
spin field effect transistor
antiferromagnetic
Issue Date2018
PublisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.org
Citation
Proceedings of the National Academy of Sciences, 2018 How to Cite?
AbstractEngineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnetic van der Waals crystals (i.e., intralayer ferromagnetism and interlayer antiferromagnetism), by employing density functional theory calculations on vanadium diselenide. Electric fields lift energy levels of the constituent layers in opposite directions, leading to the gradual closure of the gap of singular spin-polarized states and the opening of the gap of the others. We show that a vertical electrical field is a generic and effective way to achieve half metallicity in A-type antiferromagnetic bilayers and realize the spin field effect transistor. The electric field-induced half metallicity represents an appealing route to realize 2D half metals and opens opportunities for nanoscale highly efficient antiferromagnetic spintronics for information processing and storage.
Persistent Identifierhttp://hdl.handle.net/10722/262558
ISSN
2019 Impact Factor: 9.412
2015 SCImago Journal Rankings: 6.883
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGong, SJ-
dc.contributor.authorGong, C-
dc.contributor.authorSun, YY-
dc.contributor.authorTong, WY-
dc.contributor.authorDuan, CG-
dc.contributor.authorChu, JH-
dc.contributor.authorZhang, X-
dc.date.accessioned2018-10-02T04:08:56Z-
dc.date.available2018-10-02T04:08:56Z-
dc.date.issued2018-
dc.identifier.citationProceedings of the National Academy of Sciences, 2018-
dc.identifier.issn0027-8424-
dc.identifier.urihttp://hdl.handle.net/10722/262558-
dc.description.abstractEngineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnetic van der Waals crystals (i.e., intralayer ferromagnetism and interlayer antiferromagnetism), by employing density functional theory calculations on vanadium diselenide. Electric fields lift energy levels of the constituent layers in opposite directions, leading to the gradual closure of the gap of singular spin-polarized states and the opening of the gap of the others. We show that a vertical electrical field is a generic and effective way to achieve half metallicity in A-type antiferromagnetic bilayers and realize the spin field effect transistor. The electric field-induced half metallicity represents an appealing route to realize 2D half metals and opens opportunities for nanoscale highly efficient antiferromagnetic spintronics for information processing and storage.-
dc.languageeng-
dc.publisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.org-
dc.relation.ispartofProceedings of the National Academy of Sciences-
dc.rightsProceedings of the National Academy of Sciences. Copyright © National Academy of Sciences.-
dc.subject2D materials-
dc.subject2D magnetism-
dc.subjecthalf metallicity-
dc.subjectspin field effect transistor-
dc.subjectantiferromagnetic-
dc.titleElectrically induced 2D half-metallic antiferromagnets and spin field effect transistors-
dc.typeArticle-
dc.identifier.emailZhang, X: president@hku.hk-
dc.identifier.authorityZhang, X=rp02411-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1073/pnas.1715465115-
dc.identifier.isiWOS:000442351000039-
dc.publisher.placeUnited States-

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