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- Publisher Website: 10.1063/1.4992113
- Scopus: eid_2-s2.0-85024094560
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Article: Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric
Title | Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric |
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Authors | |
Issue Date | 2017 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2017, v. 111 n. 2, article no. 023104 How to Cite? |
Abstract | We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides. © 2017 Author(s). |
Persistent Identifier | http://hdl.handle.net/10722/257383 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lu, Z | - |
dc.contributor.author | Serrao, C | - |
dc.contributor.author | Khan, AI | - |
dc.contributor.author | You, L | - |
dc.contributor.author | Wong, JC | - |
dc.contributor.author | Ye, Y | - |
dc.contributor.author | Zhu, H | - |
dc.contributor.author | Zhang, X | - |
dc.contributor.author | Salahuddin, S | - |
dc.date.accessioned | 2018-07-30T03:10:04Z | - |
dc.date.available | 2018-07-30T03:10:04Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Applied Physics Letters, 2017, v. 111 n. 2, article no. 023104 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/257383 | - |
dc.description.abstract | We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides. © 2017 Author(s). | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric | - |
dc.type | Article | - |
dc.identifier.email | Zhang, X: president@hku.hk | - |
dc.identifier.authority | Zhang, X=rp02411 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.4992113 | - |
dc.identifier.scopus | eid_2-s2.0-85024094560 | - |
dc.identifier.volume | 111 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | article no. 023104 | - |
dc.identifier.epage | article no. 023104 | - |
dc.identifier.isi | WOS:000405661700044 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0003-6951 | - |