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Article: Exciton-dominant electroluminescence from a diode of monolayer MoS2
Title | Exciton-dominant electroluminescence from a diode of monolayer MoS2 |
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Authors | |
Issue Date | 2014 |
Publisher | AIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2014, v. 104 n. 19, article no. 193508 How to Cite? |
Abstract | In two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2diode, attributed to the excited exciton state of a direct-exciton transition. © 2014 AIP Publishing LLC. |
Persistent Identifier | http://hdl.handle.net/10722/257275 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ye, Yu | - |
dc.contributor.author | Ye, Ziliang | - |
dc.contributor.author | Gharghi, Majid | - |
dc.contributor.author | Zhu, Hanyu | - |
dc.contributor.author | Zhao, Mervin | - |
dc.contributor.author | Wang, Yuan | - |
dc.contributor.author | Yin, Xiaobo | - |
dc.contributor.author | Zhang, Xiang | - |
dc.date.accessioned | 2018-07-24T08:59:20Z | - |
dc.date.available | 2018-07-24T08:59:20Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Applied Physics Letters, 2014, v. 104 n. 19, article no. 193508 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/257275 | - |
dc.description.abstract | In two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2diode, attributed to the excited exciton state of a direct-exciton transition. © 2014 AIP Publishing LLC. | - |
dc.language | eng | - |
dc.publisher | AIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Exciton-dominant electroluminescence from a diode of monolayer MoS2 | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.4875959 | - |
dc.identifier.scopus | eid_2-s2.0-84900860280 | - |
dc.identifier.volume | 104 | - |
dc.identifier.issue | 19 | - |
dc.identifier.spage | article no. 193508 | - |
dc.identifier.epage | article no. 193508 | - |
dc.identifier.isi | WOS:000336918600072 | - |
dc.identifier.issnl | 0003-6951 | - |