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Article: Positioning of quantum dots on metallic nanostructures

TitlePositioning of quantum dots on metallic nanostructures
Authors
Issue Date2010
Citation
Nanotechnology, 2010, v. 21, n. 14 How to Cite?
AbstractThe capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100nm)2using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50nm accuracy accompanied by a moderate reduction in yield. © 2010 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/257024
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKramer, R. K.-
dc.contributor.authorPholchai, N.-
dc.contributor.authorSorger, V. J.-
dc.contributor.authorYim, T. J.-
dc.contributor.authorOulton, R.-
dc.contributor.authorZhang, X.-
dc.date.accessioned2018-07-24T08:58:36Z-
dc.date.available2018-07-24T08:58:36Z-
dc.date.issued2010-
dc.identifier.citationNanotechnology, 2010, v. 21, n. 14-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/257024-
dc.description.abstractThe capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100nm)2using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50nm accuracy accompanied by a moderate reduction in yield. © 2010 IOP Publishing Ltd.-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titlePositioning of quantum dots on metallic nanostructures-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/21/14/145307-
dc.identifier.pmid20234079-
dc.identifier.scopuseid_2-s2.0-77949553300-
dc.identifier.volume21-
dc.identifier.issue14-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000275652200021-
dc.identifier.issnl0957-4484-

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