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Article: Thermal conductivity and diffusivity of free‐standing silicon nitride thin films
Title | Thermal conductivity and diffusivity of free‐standing silicon nitride thin films |
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Authors | |
Issue Date | 1995 |
Publisher | American Institute of Physics. The Journal's web site is located at https://aip.scitation.org/journal/rsi |
Citation | Review of Scientific Instruments, 1995, v. 66 n. 2, p. 1115-1120 How to Cite? |
Abstract | The thermal conductivity and diffusivity of free-standing silicon nitride (Si-N) films of 0.6 and 1.4 μm in thickness are measured. A new experimental technique, the amplitude method, is proposed and applied to measurement of the thin-film thermal diffusivity. The thermal diffusivity is determined by three independent experimental approaches: the phase-shift method, the amplitude method, and the heat-pulse method. Good agreement among the measured thermal diffusivities obtained by the three methods indicates the validity of the amplitude method. High-resolution electron microscopy studies show a large quantity of voids in the 1.4 μm Si-N films. In contrast, very few voids are found in the 0.6 μm films. This difference may be responsible for the measured lower conductivity of the 1.4 μm Si-N films as compared to the 0.6 μm thin films. © 1995 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/256882 |
ISSN | 2023 Impact Factor: 1.3 2023 SCImago Journal Rankings: 0.434 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhang, Xiang | - |
dc.contributor.author | Grigoropoulos, Costas P. | - |
dc.date.accessioned | 2018-07-24T08:58:13Z | - |
dc.date.available | 2018-07-24T08:58:13Z | - |
dc.date.issued | 1995 | - |
dc.identifier.citation | Review of Scientific Instruments, 1995, v. 66 n. 2, p. 1115-1120 | - |
dc.identifier.issn | 0034-6748 | - |
dc.identifier.uri | http://hdl.handle.net/10722/256882 | - |
dc.description.abstract | The thermal conductivity and diffusivity of free-standing silicon nitride (Si-N) films of 0.6 and 1.4 μm in thickness are measured. A new experimental technique, the amplitude method, is proposed and applied to measurement of the thin-film thermal diffusivity. The thermal diffusivity is determined by three independent experimental approaches: the phase-shift method, the amplitude method, and the heat-pulse method. Good agreement among the measured thermal diffusivities obtained by the three methods indicates the validity of the amplitude method. High-resolution electron microscopy studies show a large quantity of voids in the 1.4 μm Si-N films. In contrast, very few voids are found in the 0.6 μm films. This difference may be responsible for the measured lower conductivity of the 1.4 μm Si-N films as compared to the 0.6 μm thin films. © 1995 American Institute of Physics. | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at https://aip.scitation.org/journal/rsi | - |
dc.relation.ispartof | Review of Scientific Instruments | - |
dc.title | Thermal conductivity and diffusivity of free‐standing silicon nitride thin films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.1145989 | - |
dc.identifier.scopus | eid_2-s2.0-0343635648 | - |
dc.identifier.volume | 66 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | 1115 | - |
dc.identifier.epage | 1120 | - |
dc.identifier.isi | WOS:A1995QK98000030 | - |
dc.identifier.issnl | 0034-6748 | - |