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- Publisher Website: 10.1016/S0924-4247(00)00467-2
- Scopus: eid_2-s2.0-0034508234
- WOS: WOS:000165547200010
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Article: Microstereolithography of lead zirconate titanate thick film on silicon substrate
| Title | Microstereolithography of lead zirconate titanate thick film on silicon substrate |
|---|---|
| Authors | |
| Issue Date | 2000 |
| Citation | Sensors and Actuators, A: Physical, 2000, v. 87, n. 1-2, p. 72-77 How to Cite? |
| Abstract | The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm2. The field-induced longitudinal piezoelectric coefficient (d33) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g33) is about 59.5 × 10-3V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators. |
| Persistent Identifier | http://hdl.handle.net/10722/256868 |
| ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 0.788 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jiang, X. N. | - |
| dc.contributor.author | Sun, C. | - |
| dc.contributor.author | Zhang, X. | - |
| dc.contributor.author | Xu, B. | - |
| dc.contributor.author | Ye, Y. H. | - |
| dc.date.accessioned | 2018-07-24T08:58:09Z | - |
| dc.date.available | 2018-07-24T08:58:09Z | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | Sensors and Actuators, A: Physical, 2000, v. 87, n. 1-2, p. 72-77 | - |
| dc.identifier.issn | 0924-4247 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/256868 | - |
| dc.description.abstract | The microstereolithography (μSL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 μm thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 μC/cm2. The field-induced longitudinal piezoelectric coefficient (d33) of an 84-μm thick film is 100 pC/N and the piezoelectric voltage coefficient (g33) is about 59.5 × 10-3V m/N. These results demonstrated the potential for μSL of advanced piezoelectric microsensors and microactuators. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Sensors and Actuators, A: Physical | - |
| dc.title | Microstereolithography of lead zirconate titanate thick film on silicon substrate | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1016/S0924-4247(00)00467-2 | - |
| dc.identifier.scopus | eid_2-s2.0-0034508234 | - |
| dc.identifier.volume | 87 | - |
| dc.identifier.issue | 1-2 | - |
| dc.identifier.spage | 72 | - |
| dc.identifier.epage | 77 | - |
| dc.identifier.isi | WOS:000165547200010 | - |
| dc.identifier.issnl | 0924-4247 | - |