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Article: High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

TitleHigh-Performance Single-Crystalline Perovskite Thin-Film Photodetector
Authors
Keywordssingle-crystalline thin films
photodetectors
halide perovskite
gain
Issue Date2018
Citation
Advanced Materials, 2018, v. 30, n. 8 How to Cite?
Abstract© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.
Persistent Identifierhttp://hdl.handle.net/10722/256837
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Zhenqian-
dc.contributor.authorDeng, Yuhao-
dc.contributor.authorZhang, Xiaowei-
dc.contributor.authorWang, Suo-
dc.contributor.authorChen, Huazhou-
dc.contributor.authorYang, Sui-
dc.contributor.authorKhurgin, Jacob-
dc.contributor.authorFang, Nicholas X.-
dc.contributor.authorZhang, Xiang-
dc.contributor.authorMa, Renmin-
dc.date.accessioned2018-07-24T08:58:04Z-
dc.date.available2018-07-24T08:58:04Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Materials, 2018, v. 30, n. 8-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/256837-
dc.description.abstract© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectsingle-crystalline thin films-
dc.subjectphotodetectors-
dc.subjecthalide perovskite-
dc.subjectgain-
dc.titleHigh-Performance Single-Crystalline Perovskite Thin-Film Photodetector-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201704333-
dc.identifier.scopuseid_2-s2.0-85042158849-
dc.identifier.volume30-
dc.identifier.issue8-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000425449300004-
dc.identifier.issnl0935-9648-

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