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Article: Raman scattering in the transition-metal dichalcogenides of 1T′-MoT e2,Td-MoT e2, and Td-WT e2

TitleRaman scattering in the transition-metal dichalcogenides of 1T′-MoT e2,Td-MoT e2, and Td-WT e2
Authors
Issue Date2016
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/
Citation
Physical Review B: covering condensed matter and materials physics, 2016, v. 94 n. 21, article no. 214105 How to Cite?
Abstract© 2016 American Physical Society. We comparably performed polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T′-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present paper provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance in this class of materials.
Persistent Identifierhttp://hdl.handle.net/10722/254575
ISSN
2023 Impact Factor: 3.2
2023 SCImago Journal Rankings: 1.345
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, Xiaoli-
dc.contributor.authorGuo, Pengjie-
dc.contributor.authorYi, Changjiang-
dc.contributor.authorYu, Qiaohe-
dc.contributor.authorZhang, Anmin-
dc.contributor.authorJi, Jianting-
dc.contributor.authorTian, Yong-
dc.contributor.authorJin, Feng-
dc.contributor.authorWang, Yiyan-
dc.contributor.authorLiu, Kai-
dc.contributor.authorXia, Tianlong-
dc.contributor.authorShi, Youguo-
dc.contributor.authorZhang, Qingming-
dc.date.accessioned2018-06-19T15:40:55Z-
dc.date.available2018-06-19T15:40:55Z-
dc.date.issued2016-
dc.identifier.citationPhysical Review B: covering condensed matter and materials physics, 2016, v. 94 n. 21, article no. 214105-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/254575-
dc.description.abstract© 2016 American Physical Society. We comparably performed polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T′-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present paper provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance in this class of materials.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/-
dc.relation.ispartofPhysical Review B: covering condensed matter and materials physics-
dc.titleRaman scattering in the transition-metal dichalcogenides of 1T′-MoT e2,Td-MoT e2, and Td-WT e2-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.94.214105-
dc.identifier.scopuseid_2-s2.0-85006312361-
dc.identifier.volume94-
dc.identifier.issue21-
dc.identifier.spagearticle no. 214105-
dc.identifier.epagearticle no. 214105-
dc.identifier.eissn2469-9969-
dc.identifier.isiWOS:000390247400001-
dc.identifier.issnl2469-9950-

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