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Article: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

TitleDiscovery of robust in-plane ferroelectricity in atomic-thick SnTe
Authors
Chang, KaiLiu, JunweiLin, HaichengWang, NaZhao, KunZhang, AnminJin, FengZhong, YongHu, XiaopengDuan, WenhuiZhang, QingmingFu, LiangXue, Qi KunChen, XiJi, Shuai Hua
Issue Date2016
Citation
Science, 2016, v. 353, n. 6296, p. 274-278 How to Cite?
DOI: http://dx.doi.org/10.1126/science.aad8609
AbstractStable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature.The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.
Persistent Identifierhttp://hdl.handle.net/10722/254459
ISSN
0036-8075
2023 Impact Factor: 44.7
2023 SCImago Journal Rankings: 11.902
ISI Accession Number ID
WOS:000379580800045

 

DC FieldValueLanguage
dc.contributor.authorChang, Kai-
dc.contributor.authorLiu, Junwei-
dc.contributor.authorLin, Haicheng-
dc.contributor.authorWang, Na-
dc.contributor.authorZhao, Kun-
dc.contributor.authorZhang, Anmin-
dc.contributor.authorJin, Feng-
dc.contributor.authorZhong, Yong-
dc.contributor.authorHu, Xiaopeng-
dc.contributor.authorDuan, Wenhui-
dc.contributor.authorZhang, Qingming-
dc.contributor.authorFu, Liang-
dc.contributor.authorXue, Qi Kun-
dc.contributor.authorChen, Xi-
dc.contributor.authorJi, Shuai Hua-
dc.date.accessioned2018-06-19T15:40:36Z-
dc.date.available2018-06-19T15:40:36Z-
dc.date.issued2016-
dc.identifier.citationScience, 2016, v. 353, n. 6296, p. 274-278-
dc.identifier.issn0036-8075-
dc.identifier.urihttp://hdl.handle.net/10722/254459-
dc.description.abstractStable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T c of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature.The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.-
dc.languageeng-
dc.relation.ispartofScience-
dc.titleDiscovery of robust in-plane ferroelectricity in atomic-thick SnTe-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1126/science.aad8609-
dc.identifier.scopuseid_2-s2.0-84978435522-
dc.identifier.volume353-
dc.identifier.issue6296-
dc.identifier.spage274-
dc.identifier.epage278-
dc.identifier.eissn1095-9203-
dc.identifier.isiWOS:000379580800045-
dc.identifier.issnl0036-8075-

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