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Article: Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

TitleInterface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate
Authors
Issue Date2015
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prl/
Citation
Physical Review Letters, 2015, v. 114 n. 3, article no. 037002 How to Cite?
Abstract© 2015 American Physical Society. We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.
Persistent Identifierhttp://hdl.handle.net/10722/254436
ISSN
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCui, Y. T.-
dc.contributor.authorMoore, R. G.-
dc.contributor.authorZhang, A. M.-
dc.contributor.authorTian, Y.-
dc.contributor.authorLee, J. J.-
dc.contributor.authorSchmitt, F. T.-
dc.contributor.authorZhang, W. H.-
dc.contributor.authorLi, W.-
dc.contributor.authorYi, M.-
dc.contributor.authorLiu, Z. K.-
dc.contributor.authorHashimoto, M.-
dc.contributor.authorZhang, Y.-
dc.contributor.authorLu, D. H.-
dc.contributor.authorDevereaux, T. P.-
dc.contributor.authorWang, L. L.-
dc.contributor.authorMa, X. C.-
dc.contributor.authorZhang, Q. M.-
dc.contributor.authorXue, Q. K.-
dc.contributor.authorLee, D. H.-
dc.contributor.authorShen, Z. X.-
dc.date.accessioned2018-06-19T15:40:32Z-
dc.date.available2018-06-19T15:40:32Z-
dc.date.issued2015-
dc.identifier.citationPhysical Review Letters, 2015, v. 114 n. 3, article no. 037002-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/254436-
dc.description.abstract© 2015 American Physical Society. We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prl/-
dc.relation.ispartofPhysical Review Letters-
dc.titleInterface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevLett.114.037002-
dc.identifier.scopuseid_2-s2.0-84921475722-
dc.identifier.volume114-
dc.identifier.issue3-
dc.identifier.spagearticle no. 037002-
dc.identifier.epagearticle no. 037002-
dc.identifier.eissn1079-7114-
dc.identifier.isiWOS:000348576100017-
dc.identifier.issnl0031-9007-

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