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Article: High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1–x)Oy Gate Dielectric Fabricated on Vacuum Tape

TitleHigh-Mobility Pentacene Organic Thin-Film Transistor with La<italic>x</italic>Nb(1–<italic>x</italic>)O<italic>y</italic> Gate Dielectric Fabricated on Vacuum Tape
Authors
KeywordsFlexible electronics
High-κ dielectric
Hysteresis
LaNbO
Organic thin-film transistor (OTFT)
Issue Date2017
Citation
IEEE Transactions on Electron Devices, 2017, v. 64, p. 1716-1722 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247436
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHAN, C-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:14Z-
dc.date.available2017-10-18T08:27:14Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, v. 64, p. 1716-1722-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247436-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectFlexible electronics-
dc.subjectHigh-κ dielectric-
dc.subjectHysteresis-
dc.subjectLaNbO-
dc.subjectOrganic thin-film transistor (OTFT)-
dc.titleHigh-Mobility Pentacene Organic Thin-Film Transistor with La<italic>x</italic>Nb(1–<italic>x</italic>)O<italic>y</italic> Gate Dielectric Fabricated on Vacuum Tape -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2661806-
dc.identifier.scopuseid_2-s2.0-85013639221-
dc.identifier.hkuros280873-
dc.identifier.volume64-
dc.identifier.spage1716-
dc.identifier.epage1722-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000398818400046-
dc.identifier.issnl0018-9383-

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