β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

Abstract

A four-terminal photodetector was fabricated on the (2⎯⎯⎯012¯01)-dominant β-Ga2O3 thin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported β-Ga2O3 interdigital metal-semiconductor-metal photoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metal devices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.