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postgraduate thesis: Interface exciton in type II lateral heterojunction of monolayer semiconductor

TitleInterface exciton in type II lateral heterojunction of monolayer semiconductor
Authors
Lau, Ka-wai劉家偉
Issue Date2016
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Lau, K. [劉家偉]. (2016). Interface exciton in type II lateral heterojunction of monolayer semiconductor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR.
DegreeMaster of Philosophy
SubjectSemiconductors
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/238834
HKU Library Item IDb5824346

 

DC FieldValueLanguage
dc.contributor.authorLau, Ka-wai-
dc.contributor.author劉家偉-
dc.date.accessioned2017-02-20T02:06:37Z-
dc.date.available2017-02-20T02:06:37Z-
dc.date.issued2016-
dc.identifier.citationLau, K. [劉家偉]. (2016). Interface exciton in type II lateral heterojunction of monolayer semiconductor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR.-
dc.identifier.urihttp://hdl.handle.net/10722/238834-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.subject.lcshSemiconductors-
dc.titleInterface exciton in type II lateral heterojunction of monolayer semiconductor-
dc.typePG_Thesis-
dc.identifier.hkulb5824346-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.mmsid991021209889703414-

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