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- Publisher Website: 10.1016/j.jcrysgro.2016.11.057
- Scopus: eid_2-s2.0-84998631534
- WOS: WOS:000393004600012
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Article: Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy
Title | Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy |
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Authors | |
Keywords | B2. Bi2Se3 B2. Ga2Se3 A1. Suspended Ga2Se3 Film B1. Topological insulator A3. Molecular-Beam Epitaxy |
Issue Date | 2017 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro |
Citation | Journal of Crystal Growth, 2017, v. 459, p. 76-80 How to Cite? |
Abstract | High-index Bi2Se3(221) has been successfully grown on partially suspended Ga2Se3(001). The Ga2Se3 layer was formed by selenation of GaSb(001) surface, which revealed a suspended structure supported only by some GaSb nano-pillars. Such a growth behavior may be beneficial for achieving heterostructures with large lattice misfits and suppressing the coupling between the substrate and deposit. Bi2Se3, a typical topological insulator, has been grown on Ga2Se3 along the high-index [221] direction despite of the large lattice mismatch. |
Persistent Identifier | http://hdl.handle.net/10722/237772 |
ISSN | 2023 Impact Factor: 1.7 2023 SCImago Journal Rankings: 0.379 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Li, B | - |
dc.contributor.author | Xia, Y | - |
dc.contributor.author | Ho, WK | - |
dc.contributor.author | Xie, MH | - |
dc.date.accessioned | 2017-01-20T02:28:20Z | - |
dc.date.available | 2017-01-20T02:28:20Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Journal of Crystal Growth, 2017, v. 459, p. 76-80 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10722/237772 | - |
dc.description.abstract | High-index Bi2Se3(221) has been successfully grown on partially suspended Ga2Se3(001). The Ga2Se3 layer was formed by selenation of GaSb(001) surface, which revealed a suspended structure supported only by some GaSb nano-pillars. Such a growth behavior may be beneficial for achieving heterostructures with large lattice misfits and suppressing the coupling between the substrate and deposit. Bi2Se3, a typical topological insulator, has been grown on Ga2Se3 along the high-index [221] direction despite of the large lattice mismatch. | - |
dc.language | eng | - |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | - |
dc.relation.ispartof | Journal of Crystal Growth | - |
dc.rights | Posting accepted manuscript (postprint): © <year>. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | - |
dc.subject | B2. Bi2Se3 | - |
dc.subject | B2. Ga2Se3 | - |
dc.subject | A1. Suspended Ga2Se3 Film | - |
dc.subject | B1. Topological insulator | - |
dc.subject | A3. Molecular-Beam Epitaxy | - |
dc.title | Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy | - |
dc.type | Article | - |
dc.identifier.email | Li, B: silasph@hku.hk | - |
dc.identifier.email | Ho, WK: howk@hku.hk | - |
dc.identifier.email | Xie, MH: mhxie@hku.hk | - |
dc.identifier.authority | Xie, MH=rp00818 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2016.11.057 | - |
dc.identifier.scopus | eid_2-s2.0-84998631534 | - |
dc.identifier.hkuros | 270933 | - |
dc.identifier.volume | 459 | - |
dc.identifier.spage | 76 | - |
dc.identifier.epage | 80 | - |
dc.identifier.isi | WOS:000393004600012 | - |
dc.publisher.place | Netherlands | - |
dc.identifier.issnl | 0022-0248 | - |