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Conference Paper: In2O3 based perovskite solar cells

TitleIn2O3 based perovskite solar cells
Authors
Dong, QLiu, FWong, MKDjurisic, ABRen, ZShen, QNg, ASurya, CChan, WK
KeywordsElectron transport layer
In2O3
Perovskite
Issue Date2016
PublisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
The 2016 Oxide-Based Materials and Devices VII, San Francisco, CA., 14-17 February 2016. In Proceedings of SPIE, 2016, v. 9749, article no. 97491S, p. 1-8 How to Cite?
DOI: http://dx.doi.org/10.1117/12.2212130
AbstractHybrid organic-inorganic perovskite solar cells have attracted lots of attention in recent years. Growth and properties of perovskite layer and its relationship to photovoltaic performance have been extensively studied. Comparably less attention was devoted to the research of the influence of electron transporting layer (ETL). Conventionally, TiO2 is selected as ETL. However, photocatalytic property of this transparent conductive metal oxide reduces the stability of perovskite solar cells under illumination. To realize the commercialization, the stability of perovskite solar cell must be improved. In this study, we replace TiO2 by In2O3, which is not only transparent and conductive, but also has little photocatalytic effect and it has higher electron mobility than TiO2. Investigation on different solution process methods of In2O3 as ETL is demonstrated. © 2016 SPIE.
DescriptionSession PWed: Posters-Wednesday: Paper 9749-47
Persistent Identifierhttp://hdl.handle.net/10722/234947
ISSN
0277-786X
2020 SCImago Journal Rankings: 0.192
ISI Accession Number ID
WOS:000382989200027

 

DC FieldValueLanguage
dc.contributor.authorDong, Q-
dc.contributor.authorLiu, F-
dc.contributor.authorWong, MK-
dc.contributor.authorDjurisic, AB-
dc.contributor.authorRen, Z-
dc.contributor.authorShen, Q-
dc.contributor.authorNg, A-
dc.contributor.authorSurya, C-
dc.contributor.authorChan, WK-
dc.date.accessioned2016-10-14T13:50:15Z-
dc.date.available2016-10-14T13:50:15Z-
dc.date.issued2016-
dc.identifier.citationThe 2016 Oxide-Based Materials and Devices VII, San Francisco, CA., 14-17 February 2016. In Proceedings of SPIE, 2016, v. 9749, article no. 97491S, p. 1-8-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/234947-
dc.descriptionSession PWed: Posters-Wednesday: Paper 9749-47-
dc.description.abstractHybrid organic-inorganic perovskite solar cells have attracted lots of attention in recent years. Growth and properties of perovskite layer and its relationship to photovoltaic performance have been extensively studied. Comparably less attention was devoted to the research of the influence of electron transporting layer (ETL). Conventionally, TiO2 is selected as ETL. However, photocatalytic property of this transparent conductive metal oxide reduces the stability of perovskite solar cells under illumination. To realize the commercialization, the stability of perovskite solar cell must be improved. In this study, we replace TiO2 by In2O3, which is not only transparent and conductive, but also has little photocatalytic effect and it has higher electron mobility than TiO2. Investigation on different solution process methods of In2O3 as ETL is demonstrated. © 2016 SPIE.-
dc.languageeng-
dc.publisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2016 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2212130-
dc.subjectElectron transport layer-
dc.subjectIn2O3-
dc.subjectPerovskite-
dc.titleIn2O3 based perovskite solar cells-
dc.typeConference_Paper-
dc.identifier.emailDjurisic, AB: dalek@hku.hk-
dc.identifier.emailChan, WK: waichan@hku.hk-
dc.identifier.authorityDjurisic, AB=rp00690-
dc.identifier.authorityChan, WK=rp00667-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2212130-
dc.identifier.scopuseid_2-s2.0-84981340632-
dc.identifier.hkuros269280-
dc.identifier.volume9749-
dc.identifier.spagearticle no. 97491S, p. 1-
dc.identifier.epagearticle no. 97491S, p. 8-
dc.identifier.isiWOS:000382989200027-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 161101-
dc.identifier.issnl0277-786X-

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