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Article: High density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond

TitleHigh density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond
Authors
Kleinsasser, EEStanfield, MMBanks, JKQZHU, ZLi, WAcosta, VMWatanabe, HItoh, KMFu, KMC
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 108 n. 20, article no. 202401, p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4949357
Persistent Identifierhttp://hdl.handle.net/10722/232001
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000377024000025

 

DC FieldValueLanguage
dc.contributor.authorKleinsasser, EE-
dc.contributor.authorStanfield, MM-
dc.contributor.authorBanks, JKQ-
dc.contributor.authorZHU, Z-
dc.contributor.authorLi, W-
dc.contributor.authorAcosta, VM-
dc.contributor.authorWatanabe, H-
dc.contributor.authorItoh, KM-
dc.contributor.authorFu, KMC-
dc.date.accessioned2016-09-20T05:26:55Z-
dc.date.available2016-09-20T05:26:55Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 108 n. 20, article no. 202401, p. 1-4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/232001-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 108 n. 20, article no. 202401, p. 1-4 and may be found at https://doi.org/10.1063/1.4949357-
dc.titleHigh density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond-
dc.typeArticle-
dc.identifier.emailLi, W: liwd@hku.hk-
dc.identifier.authorityLi, W=rp01581-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4949357-
dc.identifier.scopuseid_2-s2.0-84971324364-
dc.identifier.hkuros265620-
dc.identifier.volume108-
dc.identifier.issue20-
dc.identifier.spagearticle no. 202401, p. 1-
dc.identifier.epagearticle no. 202401, p. 4-
dc.identifier.isiWOS:000377024000025-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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