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Article: Influence of Strain on Emission from GaN-on-Si microdisks

TitleInfluence of Strain on Emission from GaN-on-Si microdisks
Authors
ZHANG, YHuang, JLi, KHBai, DWang, YWang, TChoi, HW
KeywordsGaN on Si microdisks
GaN-based microcavities
near-field microscopy
optical micro-resonators
strain-relaxation effects
Issue Date2016
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal of Physics D: Applied Physics, 2016, v. 49 n. 37, p. article no. 375103 How to Cite?
DOI: http://dx.doi.org/10.1088/0022-3727/49/37/375103
Persistent Identifierhttp://hdl.handle.net/10722/231906
ISSN
0022-3727
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.681
ISI Accession Number ID
WOS:000384093000009

 

DC FieldValueLanguage
dc.contributor.authorZHANG, Y-
dc.contributor.authorHuang, J-
dc.contributor.authorLi, KH-
dc.contributor.authorBai, D-
dc.contributor.authorWang, Y-
dc.contributor.authorWang, T-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:26:17Z-
dc.date.available2016-09-20T05:26:17Z-
dc.date.issued2016-
dc.identifier.citationJournal of Physics D: Applied Physics, 2016, v. 49 n. 37, p. article no. 375103-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10722/231906-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd-
dc.relation.ispartofJournal of Physics D: Applied Physics-
dc.rightsJournal of Physics D: Applied Physics. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectGaN on Si microdisks-
dc.subjectGaN-based microcavities-
dc.subjectnear-field microscopy-
dc.subjectoptical micro-resonators-
dc.subjectstrain-relaxation effects-
dc.titleInfluence of Strain on Emission from GaN-on-Si microdisks-
dc.typeArticle-
dc.identifier.emailHuang, J: jahuang@HKUCC-COM.hku.hk-
dc.identifier.emailLi, KH: khei@eee.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.doi10.1088/0022-3727/49/37/375103-
dc.identifier.scopuseid_2-s2.0-84988960751-
dc.identifier.hkuros263427-
dc.identifier.volume49-
dc.identifier.issue37-
dc.identifier.spagearticle no. 375103-
dc.identifier.epagearticle no. 375103-
dc.identifier.isiWOS:000384093000009-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0022-3727-

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