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Article: Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Title | Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation |
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Authors | |
Issue Date | 2015 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2015, v. 107 n. 21, article no. 213501 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/231901 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | LIU, L | - |
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Xu, JP | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2016-09-20T05:26:15Z | - |
dc.date.available | 2016-09-20T05:26:15Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Applied Physics Letters, 2015, v. 107 n. 21, article no. 213501 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/231901 | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.rights | Copyright 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters, 2015, v. 107 n. 21, article no. 213501 and may be found at https://doi.org/10.1063/1.4936329 | - |
dc.title | Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation | - |
dc.type | Article | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4936329 | - |
dc.identifier.scopus | eid_2-s2.0-84948407055 | - |
dc.identifier.hkuros | 263401 | - |
dc.identifier.volume | 107 | - |
dc.identifier.issue | 21 | - |
dc.identifier.spage | article no. 213501 | - |
dc.identifier.epage | article no. 213501 | - |
dc.identifier.isi | WOS:000365677500039 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0003-6951 | - |