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Article: Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation

TitlePassivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Authors
LIU, LChoi, HWXu, JPLai, PT
Issue Date2015
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2015, v. 107 n. 21, article no. 213501 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4936329
Persistent Identifierhttp://hdl.handle.net/10722/231901
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000365677500039

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-09-20T05:26:15Z-
dc.date.available2016-09-20T05:26:15Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107 n. 21, article no. 213501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/231901-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters, 2015, v. 107 n. 21, article no. 213501 and may be found at https://doi.org/10.1063/1.4936329-
dc.titlePassivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4936329-
dc.identifier.scopuseid_2-s2.0-84948407055-
dc.identifier.hkuros263401-
dc.identifier.volume107-
dc.identifier.issue21-
dc.identifier.spagearticle no. 213501-
dc.identifier.epagearticle no. 213501-
dc.identifier.isiWOS:000365677500039-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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