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Article: A Solution-Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices

TitleA Solution-Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices
Authors
Poon, CTWu, DLam, SWHYam, VWW
Keywordsboron
donor-acceptor systems
organic electronics
ternary memory devices
Issue Date2015
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/26737/home
Citation
Angewandte Chemie (International Edition), 2015, v. 54 n. 36, p. 10569-10573 How to Cite?
DOI: http://dx.doi.org/10.1002/anie.201504997
Persistent Identifierhttp://hdl.handle.net/10722/231661
ISSN
1433-7851
2023 Impact Factor: 16.1
2023 SCImago Journal Rankings: 5.300
ISI Accession Number ID
WOS:000360312800030

 

DC FieldValueLanguage
dc.contributor.authorPoon, CT-
dc.contributor.authorWu, D-
dc.contributor.authorLam, SWH-
dc.contributor.authorYam, VWW-
dc.date.accessioned2016-09-20T05:24:41Z-
dc.date.available2016-09-20T05:24:41Z-
dc.date.issued2015-
dc.identifier.citationAngewandte Chemie (International Edition), 2015, v. 54 n. 36, p. 10569-10573-
dc.identifier.issn1433-7851-
dc.identifier.urihttp://hdl.handle.net/10722/231661-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/26737/home-
dc.relation.ispartofAngewandte Chemie (International Edition)-
dc.rightspostprint: This is the accepted version of the following article: FULL CITE, which has been published in final form at [Link to final article]. Preprint This is the pre-peer reviewed version of the following article: FULL CITE, which has been published in final form at [Link to final article].-
dc.subjectboron-
dc.subjectdonor-acceptor systems-
dc.subjectorganic electronics-
dc.subjectternary memory devices-
dc.titleA Solution-Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices-
dc.typeArticle-
dc.identifier.emailLam, SWH: chsue@hku.hk-
dc.identifier.emailYam, VWW: wwyam@hku.hk-
dc.identifier.authorityLam, SWH=rp00719-
dc.identifier.authorityYam, VWW=rp00822-
dc.identifier.doi10.1002/anie.201504997-
dc.identifier.scopuseid_2-s2.0-84940093757-
dc.identifier.hkuros265013-
dc.identifier.volume54-
dc.identifier.issue36-
dc.identifier.spage10569-
dc.identifier.epage10573-
dc.identifier.isiWOS:000360312800030-
dc.publisher.placeGermany-
dc.identifier.issnl1433-7851-

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