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Article: Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

TitleInterfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing
Authors
LAI, KCWU, PYCHEN, CMWEI, TCWU, CHFeng, SPT
KeywordsAnnealing
diffusion
electroless
microstructures
nickel
Issue Date2016
Citation
Journal of Electronic Materials, 2016, v. 45, p. 4813-4822 How to Cite?
DOI: http://dx.doi.org/10.1007/s11664-016-4708-x
Persistent Identifierhttp://hdl.handle.net/10722/227334
ISSN
0361-5235
2023 Impact Factor: 2.2
2023 SCImago Journal Rankings: 0.439
ISI Accession Number ID
WOS:000382585400014

 

DC FieldValueLanguage
dc.contributor.authorLAI, KC-
dc.contributor.authorWU, PY-
dc.contributor.authorCHEN, CM-
dc.contributor.authorWEI, TC-
dc.contributor.authorWU, CH-
dc.contributor.authorFeng, SPT-
dc.date.accessioned2016-07-18T09:09:51Z-
dc.date.available2016-07-18T09:09:51Z-
dc.date.issued2016-
dc.identifier.citationJournal of Electronic Materials, 2016, v. 45, p. 4813-4822-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10722/227334-
dc.languageeng-
dc.relation.ispartofJournal of Electronic Materials-
dc.subjectAnnealing-
dc.subjectdiffusion-
dc.subjectelectroless-
dc.subjectmicrostructures-
dc.subjectnickel-
dc.titleInterfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing-
dc.typeArticle-
dc.identifier.emailFeng, SPT: hpfeng@hku.hk-
dc.identifier.authorityFeng, SPT=rp01533-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s11664-016-4708-x-
dc.identifier.scopuseid_2-s2.0-84974801261-
dc.identifier.hkuros258966-
dc.identifier.volume45-
dc.identifier.spage4813-
dc.identifier.epage4822-
dc.identifier.eissn1543-186X-
dc.identifier.isiWOS:000382585400014-
dc.identifier.issnl0361-5235-

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