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Article: Improved light outcoupling for top-emitting organic light-emitting devices

TitleImproved light outcoupling for top-emitting organic light-emitting devices
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 4, article no. 043505 How to Cite?
AbstractLight outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4′, 4″-tris(3-methylphenylphenylamino)triphenylamine/4, 4′-bis[N-(1- naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq3 emission reach 145 474 cd/m2 (13 V) and 12.2 cd/A (5 V), respectively. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/225874
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Shufen-
dc.contributor.authorJie, Zhonghai-
dc.contributor.authorZhao, Zhenyuan-
dc.contributor.authorCheng, Gang-
dc.contributor.authorWu, Zhijun-
dc.contributor.authorZhao, Yi-
dc.contributor.authorQuan, Baofu-
dc.contributor.authorLiu, Shiyong-
dc.contributor.authorLi, Xue-
dc.contributor.authorXie, Wenfa-
dc.date.accessioned2016-05-23T02:22:01Z-
dc.date.available2016-05-23T02:22:01Z-
dc.date.issued2006-
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 4, article no. 043505-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/225874-
dc.description.abstractLight outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4′, 4″-tris(3-methylphenylphenylamino)triphenylamine/4, 4′-bis[N-(1- naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq3 emission reach 145 474 cd/m2 (13 V) and 12.2 cd/A (5 V), respectively. © 2006 American Institute of Physics.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.titleImproved light outcoupling for top-emitting organic light-emitting devices-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2236224-
dc.identifier.scopuseid_2-s2.0-33746626097-
dc.identifier.volume89-
dc.identifier.issue4-
dc.identifier.spagearticle no. 043505-
dc.identifier.epagearticle no. 043505-
dc.identifier.isiWOS:000239376500122-
dc.identifier.issnl0003-6951-

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