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Article: Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

TitleValley-polarized exciton dynamics in a 2D semiconductor heterostructure
Authors
Issue Date2016
Citation
Science, 2016, v. 351 n. 6274, p. 688-691 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/223881
ISSN
2023 Impact Factor: 44.7
2023 SCImago Journal Rankings: 11.902
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorRivera, P-
dc.contributor.authorSeyler, KL-
dc.contributor.authorYu, H-
dc.contributor.authorSchaibley, JR-
dc.contributor.authorYan, J-
dc.contributor.authorMandrus, DG-
dc.contributor.authorYao, W-
dc.contributor.authorXu, X-
dc.date.accessioned2016-03-18T02:30:18Z-
dc.date.available2016-03-18T02:30:18Z-
dc.date.issued2016-
dc.identifier.citationScience, 2016, v. 351 n. 6274, p. 688-691-
dc.identifier.issn0036-8075-
dc.identifier.urihttp://hdl.handle.net/10722/223881-
dc.languageeng-
dc.relation.ispartofScience-
dc.titleValley-polarized exciton dynamics in a 2D semiconductor heterostructure-
dc.typeArticle-
dc.identifier.emailYu, H: yuhongyi@hku.hk-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYu, H=rp02112-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1126/science.aac7820-
dc.identifier.pmid26912854-
dc.identifier.scopuseid_2-s2.0-84957927691-
dc.identifier.hkuros257231-
dc.identifier.volume351-
dc.identifier.issue6274-
dc.identifier.spage688-
dc.identifier.epage691-
dc.identifier.eissn1095-9203-
dc.identifier.isiWOS:000369810000035-
dc.identifier.issnl0036-8075-

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