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Article: Plasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric

TitlePlasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric
Authors
Wang, LSXu, JLiu, LLu, HLai, PTTang, WM
KeywordsHfTiON gate-dielectric
InGaAs metal-oxide-semiconductor (MOS)
interface-state
nitrided Ga2O3(Gd2O3) (GGON) interlayer
plasma-nitridation
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2015.2396972
Persistent Identifierhttp://hdl.handle.net/10722/217030
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000351753900024

 

DC FieldValueLanguage
dc.contributor.authorWang, LS-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorLu, H-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2015-09-18T05:46:31Z-
dc.date.available2015-09-18T05:46:31Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62, p. 1235-1240-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/217030-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectHfTiON gate-dielectric-
dc.subjectInGaAs metal-oxide-semiconductor (MOS)-
dc.subjectinterface-state-
dc.subjectnitrided Ga2O3(Gd2O3) (GGON) interlayer-
dc.subjectplasma-nitridation-
dc.titlePlasma-nitrided Ga2O3(Gd2O3) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric-
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2015.2396972-
dc.identifier.scopuseid_2-s2.0-85027926760-
dc.identifier.hkuros254204-
dc.identifier.volume62-
dc.identifier.spage1235-
dc.identifier.epage1240-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000351753900024-
dc.identifier.issnl0018-9383-

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