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Article: Nitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications

TitleNitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications
Authors
Wang, LSXu, JLiu, LTang, WMLai, PT
Issue Date2014
PublisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/
Citation
Applied Physics Express, 2014, v. 7, p. 061201 How to Cite?
DOI: http://dx.doi.org/10.7567/APEX.7.061201
Persistent Identifierhttp://hdl.handle.net/10722/217028
ISSN
1882-0778
2021 Impact Factor: 2.819
2020 SCImago Journal Rankings: 0.911
ISI Accession Number ID
WOS:000338692500001

 

DC FieldValueLanguage
dc.contributor.authorWang, LS-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:27Z-
dc.date.available2015-09-18T05:46:27Z-
dc.date.issued2014-
dc.identifier.citationApplied Physics Express, 2014, v. 7, p. 061201-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10722/217028-
dc.languageeng-
dc.publisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/-
dc.relation.ispartofApplied Physics Express-
dc.titleNitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications -
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/APEX.7.061201-
dc.identifier.scopuseid_2-s2.0-84904605385-
dc.identifier.hkuros254202-
dc.identifier.volume7-
dc.identifier.spage061201-
dc.identifier.epage061201-
dc.identifier.eissn1882-0786-
dc.identifier.isiWOS:000338692500001-
dc.identifier.issnl1882-0778-

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