File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1116/1.4927483
- Scopus: eid_2-s2.0-84938317242
- WOS: WOS:000361833200001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Title | Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation |
---|---|
Authors | |
Issue Date | 2015 |
Publisher | American Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/ |
Citation | Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601, p. 1-5 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/216922 |
ISSN | 2023 Impact Factor: 1.5 2023 SCImago Journal Rankings: 0.328 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, L | - |
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Xu, JP | - |
dc.date.accessioned | 2015-09-18T05:43:03Z | - |
dc.date.available | 2015-09-18T05:43:03Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601, p. 1-5 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | http://hdl.handle.net/10722/216922 | - |
dc.language | eng | - |
dc.publisher | American Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/ | - |
dc.relation.ispartof | Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics | - |
dc.rights | Copyright 2015 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601, p. 1-5 and may be found at https://doi.org/10.1116/1.4927483 | - |
dc.title | Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation | - |
dc.type | Article | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1116/1.4927483 | - |
dc.identifier.scopus | eid_2-s2.0-84938317242 | - |
dc.identifier.hkuros | 250316 | - |
dc.identifier.volume | 33 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | article no. 050601, p. 1 | - |
dc.identifier.epage | article no. 050601, p. 5 | - |
dc.identifier.isi | WOS:000361833200001 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 2166-2746 | - |