File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Permittivity of oxidized ultra-thin silicon films from atomistic simulations

TitlePermittivity of oxidized ultra-thin silicon films from atomistic simulations
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2015, v. 36 n. 10, p. 1076-1078 How to Cite?
AbstractWe establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding theory (DFTB). This is of utmost importance for modeling ultra- and extremely-thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with available experimental data. Comparison to calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9 nm silicon-on-insulator.
Persistent Identifierhttp://hdl.handle.net/10722/215166
ISSN
2017 Impact Factor: 3.433
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.contributor.authorPenazzi, G-
dc.contributor.authorKwok, YH-
dc.contributor.authorAradi, B-
dc.contributor.authorPecchia, A-
dc.contributor.authorFrauenheim, T-
dc.contributor.authorChen, G-
dc.date.accessioned2015-08-21T13:16:42Z-
dc.date.available2015-08-21T13:16:42Z-
dc.date.issued2015-
dc.identifier.citationIEEE Electron Device Letters, 2015, v. 36 n. 10, p. 1076-1078-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/215166-
dc.description.abstractWe establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding theory (DFTB). This is of utmost importance for modeling ultra- and extremely-thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with available experimental data. Comparison to calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9 nm silicon-on-insulator.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.titlePermittivity of oxidized ultra-thin silicon films from atomistic simulations-
dc.typeArticle-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.emailChen, G: ghchen@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.authorityChen, G=rp00671-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2015.2465850-
dc.identifier.hkuros248452-
dc.identifier.volume36-
dc.identifier.issue10-
dc.identifier.spage1076-
dc.identifier.epage1078-
dc.identifier.isiWOS:000362288700027-
dc.publisher.placeUnited States-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats