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- Publisher Website: 10.1116/1.1361040
- Scopus: eid_2-s2.0-0035326482
- WOS: WOS:000169366600049
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Conference Paper: Electron field emission characteristics of textured silicon surface
| Title | Electron field emission characteristics of textured silicon surface |
|---|---|
| Authors | |
| Issue Date | 2001 |
| Publisher | American Vacuum Society. The Journal's web site is located at https://avs.scitation.org/journal/jvb |
| Citation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, v. 19 n. 3, p. 884-887 How to Cite? |
| Abstract | Potassium hydroxide (KOH) and isopropyl alcohol (IPA) solutions were used for the fabrication of very high densely randomly distributed silicon field emitter. Dilute inorganic alkaline in IPA solution was used for the investigation of a texturing process. The surface roughness of the silicon wafer was significantly increased with the use of KOH and IPA solutions. Surface roughness was found to be influenced by the emission current. Randomly distributed pyramids on the crystallographic plane were formed without any masking pattern. The results showed improvement in the field emission properties after high dose carbon implantation. |
| Persistent Identifier | http://hdl.handle.net/10722/206291 |
| ISSN | 2018 Impact Factor: 1.351 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Fung, Yi Man Eva | - |
| dc.contributor.author | Cheung, WingYiu | - |
| dc.contributor.author | Wilson, Ian Howard | - |
| dc.contributor.author | Chen, Dihu | - |
| dc.contributor.author | Xu, Jianbin | - |
| dc.contributor.author | Wong, Saipeng | - |
| dc.contributor.author | Kwok, Raymund Wai Man | - |
| dc.date.accessioned | 2014-10-22T01:25:34Z | - |
| dc.date.available | 2014-10-22T01:25:34Z | - |
| dc.date.issued | 2001 | - |
| dc.identifier.citation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, v. 19 n. 3, p. 884-887 | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/206291 | - |
| dc.description.abstract | Potassium hydroxide (KOH) and isopropyl alcohol (IPA) solutions were used for the fabrication of very high densely randomly distributed silicon field emitter. Dilute inorganic alkaline in IPA solution was used for the investigation of a texturing process. The surface roughness of the silicon wafer was significantly increased with the use of KOH and IPA solutions. Surface roughness was found to be influenced by the emission current. Randomly distributed pyramids on the crystallographic plane were formed without any masking pattern. The results showed improvement in the field emission properties after high dose carbon implantation. | - |
| dc.language | eng | - |
| dc.publisher | American Vacuum Society. The Journal's web site is located at https://avs.scitation.org/journal/jvb | - |
| dc.relation.ispartof | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | - |
| dc.title | Electron field emission characteristics of textured silicon surface | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1116/1.1361040 | - |
| dc.identifier.scopus | eid_2-s2.0-0035326482 | - |
| dc.identifier.volume | 19 | - |
| dc.identifier.issue | 3 | - |
| dc.identifier.spage | 884 | - |
| dc.identifier.epage | 887 | - |
| dc.identifier.isi | WOS:000169366600049 | - |
| dc.identifier.issnl | 1071-1023 | - |