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Article: Universal transport properties of three-dimensional topological insulator nanowires
Title | Universal transport properties of three-dimensional topological insulator nanowires |
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Authors | |
Issue Date | 2014 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter and Materials Physics), 2014, v. 89 n. 24, article no. 245107 , p. 1-9 How to Cite? |
Abstract | We report theoretical calculations of electronic and transport properties mediated by topological helical states on the walls of three-dimensional topological insulator (TI) nanowires. A universal regime of quantized conductance and fluctuations is found that is induced by disorder. The average conductance of the disordered nanowire scales as a function of the number of transmission channels N in a universal form = independent of the system details. For instance, for Bi2Se3 nanowires cleaved along the x or y direction with the quintuple layers along the z direction =(5/12)N+1/2. The universal and quantized behavior is due to the topological physics happening on the walls of the nanowire under the influence of disorder. © 2014 American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/203312 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhang, L | en_US |
dc.contributor.author | Zhuang, J | en_US |
dc.contributor.author | Xing, Y | en_US |
dc.contributor.author | Li, J | en_US |
dc.contributor.author | Wang, J | en_US |
dc.contributor.author | Guo, H | en_US |
dc.date.accessioned | 2014-09-19T14:03:14Z | - |
dc.date.available | 2014-09-19T14:03:14Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2014, v. 89 n. 24, article no. 245107 , p. 1-9 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10722/203312 | - |
dc.description.abstract | We report theoretical calculations of electronic and transport properties mediated by topological helical states on the walls of three-dimensional topological insulator (TI) nanowires. A universal regime of quantized conductance and fluctuations is found that is induced by disorder. The average conductance of the disordered nanowire scales as a function of the number of transmission channels N in a universal form = independent of the system details. For instance, for Bi2Se3 nanowires cleaved along the x or y direction with the quintuple layers along the z direction =(5/12)N+1/2. The universal and quantized behavior is due to the topological physics happening on the walls of the nanowire under the influence of disorder. © 2014 American Physical Society. | - |
dc.language | eng | en_US |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_US |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | - |
dc.rights | Copyright 2014 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.89.245107 | - |
dc.title | Universal transport properties of three-dimensional topological insulator nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.email | Zhang, L: h0792061@hku.hk | en_US |
dc.identifier.email | Zhuang, J: jnzhuang@hku.hk | en_US |
dc.identifier.email | Xing, Y: xingyx@hku.hk | en_US |
dc.identifier.email | Wang, J: jianwang@hku.hk | en_US |
dc.identifier.email | Guo, H: guohku@hku.hk | en_US |
dc.identifier.authority | Xing, Y=rp00819 | en_US |
dc.identifier.authority | Wang, J=rp00799 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1103/PhysRevB.89.245107 | en_US |
dc.identifier.scopus | eid_2-s2.0-84902198287 | - |
dc.identifier.hkuros | 240125 | en_US |
dc.identifier.volume | 89 | en_US |
dc.identifier.issue | 24 | - |
dc.identifier.spage | article no. 245107, p. 1 | - |
dc.identifier.epage | article no. 245107, p. 9 | - |
dc.identifier.isi | WOS:000342234700002 | - |
dc.publisher.place | New York | en_US |
dc.identifier.issnl | 1098-0121 | - |