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Article: Controlled performance of an organic transistor memory device with an ultrathin LiF blocking layer

TitleControlled performance of an organic transistor memory device with an ultrathin LiF blocking layer
Authors
Wang, SMChan, KLLeung, CWZhao, XR
Issue Date2012
Citation
RCS Advances, 2012, v. 2 n. 24, p. 9100-9105 How to Cite?
DOI: http://dx.doi.org/10.1039/c2ra21012f
Persistent Identifierhttp://hdl.handle.net/10722/202997
ISI Accession Number ID
WOS:000308824600033

 

DC FieldValueLanguage
dc.contributor.authorWang, SMen_US
dc.contributor.authorChan, KLen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorZhao, XRen_US
dc.date.accessioned2014-09-19T11:07:39Z-
dc.date.available2014-09-19T11:07:39Z-
dc.date.issued2012en_US
dc.identifier.citationRCS Advances, 2012, v. 2 n. 24, p. 9100-9105en_US
dc.identifier.urihttp://hdl.handle.net/10722/202997-
dc.languageengen_US
dc.relation.ispartofRCS Advancesen_US
dc.titleControlled performance of an organic transistor memory device with an ultrathin LiF blocking layeren_US
dc.typeArticleen_US
dc.identifier.emailChan, KL: pklc@hku.hken_US
dc.identifier.authorityChan, KL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/c2ra21012f-
dc.identifier.scopuseid_2-s2.0-84871065428-
dc.identifier.hkuros235728en_US
dc.identifier.volume24en_US
dc.identifier.issue2en_US
dc.identifier.spage9100en_US
dc.identifier.epage9105en_US
dc.identifier.isiWOS:000308824600033-

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