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Article: Resistive switching in perovskite-oxide capacitor-type devices

TitleResistive switching in perovskite-oxide capacitor-type devices
Authors
Luo, ZLau, HKChan, PKLLeung, CW
KeywordsNonvolatile memories
Pr0.7Ca0.3MnO3 (PCMO)
resistive switching
Issue Date2014
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Citation
IEEE Transactions on Magnetics, 2014, v. 50 n. 7, article no. 3000904 How to Cite?
DOI: http://dx.doi.org/10.1109/TMAG.2013.2297408
Persistent Identifierhttp://hdl.handle.net/10722/202996
ISSN
0018-9464
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.729
ISI Accession Number ID
WOS:000343034700012

 

DC FieldValueLanguage
dc.contributor.authorLuo, Zen_US
dc.contributor.authorLau, HKen_US
dc.contributor.authorChan, PKLen_US
dc.contributor.authorLeung, CWen_US
dc.date.accessioned2014-09-19T11:07:38Z-
dc.date.available2014-09-19T11:07:38Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Transactions on Magnetics, 2014, v. 50 n. 7, article no. 3000904en_US
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10722/202996-
dc.languageengen_US
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20-
dc.relation.ispartofIEEE Transactions on Magneticsen_US
dc.subjectNonvolatile memories-
dc.subjectPr0.7Ca0.3MnO3 (PCMO)-
dc.subjectresistive switching-
dc.titleResistive switching in perovskite-oxide capacitor-type devicesen_US
dc.typeArticleen_US
dc.identifier.emailChan, PKL: pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TMAG.2013.2297408-
dc.identifier.scopuseid_2-s2.0-84957561602-
dc.identifier.hkuros235692en_US
dc.identifier.volume50en_US
dc.identifier.issue7en_US
dc.identifier.isiWOS:000343034700012-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9464-

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