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Article: High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric
Title | High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric |
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Authors | |
Keywords | Fluorination HfLaON high-κ dielectric organic thin-film transistor (OTFT) |
Issue Date | 2013 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/202564 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Han, CY | en_US |
dc.contributor.author | Tang, WM | en_US |
dc.contributor.author | Leung, CH | en_US |
dc.contributor.author | Che, CM | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2014-09-19T08:41:10Z | - |
dc.date.available | 2014-09-19T08:41:10Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | IEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/202564 | - |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | en_US |
dc.relation.ispartof | IEEE Electron Device Letters | en_US |
dc.subject | Fluorination | - |
dc.subject | HfLaON | - |
dc.subject | high-κ dielectric | - |
dc.subject | organic thin-film transistor (OTFT) | - |
dc.title | High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric | en_US |
dc.type | Article | en_US |
dc.identifier.email | Leung, CH: chleung@eee.hku.hk | en_US |
dc.identifier.email | Che, CM: cmche@hku.hk | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Leung, CH=rp00146 | en_US |
dc.identifier.authority | Che, CM=rp00670 | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2013.2281661 | - |
dc.identifier.scopus | eid_2-s2.0-84887236747 | - |
dc.identifier.hkuros | 236842 | en_US |
dc.identifier.hkuros | 240515 | - |
dc.identifier.volume | 34 | en_US |
dc.identifier.spage | 1397 | en_US |
dc.identifier.epage | 1399 | en_US |
dc.identifier.eissn | 1558-0563 | - |
dc.identifier.isi | WOS:000326284100015 | - |
dc.publisher.place | New York, USA | en_US |
dc.identifier.issnl | 0741-3106 | - |