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Article: Enhanced Raman scattering from vertical silicon nanowires array
| Title | Enhanced Raman scattering from vertical silicon nanowires array |
|---|---|
| Authors | |
| Issue Date | 2011 |
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
| Citation | Applied Physics Letters, 2011, v. 98 n. 18, article no. 183108, p. 1-3 How to Cite? |
| Abstract | We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model. © 2011 American Institute of Physics. |
| Persistent Identifier | http://hdl.handle.net/10722/199198 |
| ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, JA | en_US |
| dc.date.accessioned | 2014-07-22T01:07:43Z | - |
| dc.date.available | 2014-07-22T01:07:43Z | - |
| dc.date.issued | 2011 | en_US |
| dc.identifier.citation | Applied Physics Letters, 2011, v. 98 n. 18, article no. 183108, p. 1-3 | - |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/199198 | - |
| dc.description.abstract | We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model. © 2011 American Institute of Physics. | en_US |
| dc.language | eng | en_US |
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
| dc.relation.ispartof | Applied Physics Letters | en_US |
| dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 18, article no. 183108, p. 1-3 and may be found at https://doi.org/10.1063/1.3584871 | - |
| dc.title | Enhanced Raman scattering from vertical silicon nanowires array | en_US |
| dc.type | Article | en_US |
| dc.description.nature | published_or_final_version | en_US |
| dc.identifier.doi | 10.1063/1.3584871 | en_US |
| dc.identifier.scopus | eid_2-s2.0-79957457579 | - |
| dc.identifier.hkuros | 230416 | en_US |
| dc.identifier.volume | 98 | en_US |
| dc.identifier.issue | 18 | en_US |
| dc.identifier.spage | article no. 183108, p. 1 | - |
| dc.identifier.epage | article no. 183108, p. 3 | - |
| dc.identifier.isi | WOS:000290392300052 | - |
| dc.publisher.place | United States | en_US |
| dc.identifier.issnl | 0003-6951 | - |