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Article: Band alignment of n-SnO2/p-GaN hetero-junction studied by x-ray photoelectron spectroscopy

TitleBand alignment of n-SnO2/p-GaN hetero-junction studied by x-ray photoelectron spectroscopy
Authors
Keywordsband offset
GaN
Issue Date2014
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal of Physics D: Applied Physics, 2014, v. 47, p. 215102:1-215102:4 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/197852
ISSN
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.681
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, Sen_US
dc.contributor.authorZhang, HYen_US
dc.contributor.authorZhao, LZen_US
dc.contributor.authorHe, Men_US
dc.contributor.authorLing, FCCen_US
dc.date.accessioned2014-06-02T15:16:38Z-
dc.date.available2014-06-02T15:16:38Z-
dc.date.issued2014en_US
dc.identifier.citationJournal of Physics D: Applied Physics, 2014, v. 47, p. 215102:1-215102:4en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://hdl.handle.net/10722/197852-
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.rightsJournal of Physics D: Applied Physics. Copyright © Institute of Physics Publishing.en_US
dc.subjectband offset-
dc.subjectGaN-
dc.titleBand alignment of n-SnO2/p-GaN hetero-junction studied by x-ray photoelectron spectroscopyen_US
dc.typeArticleen_US
dc.identifier.emailSu, S: scsu@hku.hken_US
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, FCC=rp00747en_US
dc.identifier.doi10.1088/0022-3727/47/21/215102en_US
dc.identifier.scopuseid_2-s2.0-84900459153-
dc.identifier.hkuros229088en_US
dc.identifier.volume47en_US
dc.identifier.spage215102:1en_US
dc.identifier.epage215102:4en_US
dc.identifier.isiWOS:000336207400005-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.issnl0022-3727-

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