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Article: III-nitride Light-emitting Diode with Embedded Photonic Crystals
Title | III-nitride Light-emitting Diode with Embedded Photonic Crystals |
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Authors | |
Issue Date | 2013 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2013, v. 102 n. 18, article no. 181117 How to Cite? |
Abstract | A photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC. |
Persistent Identifier | http://hdl.handle.net/10722/189022 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | LI, KH | en_US |
dc.contributor.author | ZANG, KY | en_US |
dc.contributor.author | CHUA, SJ | en_US |
dc.contributor.author | Choi, HW | en_US |
dc.date.accessioned | 2013-09-17T14:24:35Z | - |
dc.date.available | 2013-09-17T14:24:35Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | Applied Physics Letters, 2013, v. 102 n. 18, article no. 181117 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/189022 | - |
dc.description.abstract | A photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC. | - |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 102 n. 18, article no. 181117 and may be found at https://doi.org/10.1063/1.4804678 | - |
dc.title | III-nitride Light-emitting Diode with Embedded Photonic Crystals | en_US |
dc.type | Article | en_US |
dc.identifier.email | Choi, HW: hwchoi@eee.hku.hk | en_US |
dc.identifier.authority | Choi, HW=rp00108 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4804678 | - |
dc.identifier.scopus | eid_2-s2.0-84877739957 | - |
dc.identifier.hkuros | 221366 | en_US |
dc.identifier.volume | 102 | en_US |
dc.identifier.issue | 18 | - |
dc.identifier.spage | article no. 181117 | - |
dc.identifier.epage | article no. 181117 | - |
dc.identifier.isi | WOS:000320439900017 | - |
dc.identifier.issnl | 0003-6951 | - |