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Article: Electronic Transitions of Iridium Monoxide: Ground and Low-Lying Electronic States

TitleElectronic Transitions of Iridium Monoxide: Ground and Low-Lying Electronic States
Authors
PANG, HFNG, YWCheung, ASC
Issue Date2012
Citation
The Journal of Physical Chemistry A, 2012, v. 116 n. 39, p. 9739-9744 How to Cite?
DOI: http://dx.doi.org/10.1021/jp305197r
Persistent Identifierhttp://hdl.handle.net/10722/185728
ISI Accession Number ID
WOS:000309375300016

 

DC FieldValueLanguage
dc.contributor.authorPANG, HFen_US
dc.contributor.authorNG, YWen_US
dc.contributor.authorCheung, ASCen_US
dc.date.accessioned2013-08-20T11:37:43Z-
dc.date.available2013-08-20T11:37:43Z-
dc.date.issued2012en_US
dc.identifier.citationThe Journal of Physical Chemistry A, 2012, v. 116 n. 39, p. 9739-9744en_US
dc.identifier.urihttp://hdl.handle.net/10722/185728-
dc.languageengen_US
dc.relation.ispartofThe Journal of Physical Chemistry Aen_US
dc.titleElectronic Transitions of Iridium Monoxide: Ground and Low-Lying Electronic Statesen_US
dc.typeArticleen_US
dc.identifier.emailCheung, ASC: hrsccsc@hku.hken_US
dc.identifier.authorityCheung, ASC=rp00676en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp305197r-
dc.identifier.scopuseid_2-s2.0-84867080232-
dc.identifier.hkuros220029en_US
dc.identifier.volume116en_US
dc.identifier.spage9739en_US
dc.identifier.epage9744en_US
dc.identifier.isiWOS:000309375300016-

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