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Article: Simulation and experiment of substrate aluminium grain orientation dependent self-ordering in anodic porous alumina
Title | Simulation and experiment of substrate aluminium grain orientation dependent self-ordering in anodic porous alumina |
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Authors | |
Keywords | Grain and twin boundaries Oxidation Electrolytes Powders, porous materials |
Issue Date | 2013 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2013, v. 113 n. 20, article no. 204903 How to Cite? |
Abstract | Recent experiments have indicated a strong influence of the substrate grain orientation on the
self-ordering in anodic porous alumina. Anodic porous alumina with straight pore channels grown
in a stable, self-ordered manner is formed on (001) oriented Al grain, while disordered porous
pattern is formed on (101) oriented Al grain with tilted pore channels growing in an unstable
manner. In this work, numerical simulation of the pore growth process is carried out to understand
this phenomenon. The rate-determining step of the oxide growth is assumed to be the Cabrera-Mott
barrier at the oxide/electrolyte (o/e) interface, while the substrate is assumed to determine the ratio
b between the ionization and oxidation reactions at the metal/oxide (m/o) interface. By numerically
solving the electric field inside a growing porous alumina during anodization, the migration rates
of the ions and hence the evolution of the o/e and m/o interfaces are computed. The simulated
results show that pore growth is more stable when b is higher. A higher b corresponds to more Al
ionized and migrating away from the m/o interface rather than being oxidized, and hence a higher
retained O:Al ratio in the oxide. Experimentally measured oxygen content in the self-ordered
porous alumina on (001) Al is indeed found to be about 3% higher than that in the disordered
alumina on (101) Al, in agreement with the theoretical prediction. The results, therefore, suggest
that ionization on (001) Al substrate is relatively easier than on (101) Al, and this leads to the more
stable growth of the pore channels on (001) Al. VC 2013 AIP Publishing LLC. |
Persistent Identifier | http://hdl.handle.net/10722/183662 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Cheng, C | - |
dc.contributor.author | Ng, KY | - |
dc.contributor.author | Aluru, NR | - |
dc.contributor.author | Ngan, AHW | - |
dc.date.accessioned | 2013-06-14T03:15:29Z | - |
dc.date.available | 2013-06-14T03:15:29Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Journal of Applied Physics, 2013, v. 113 n. 20, article no. 204903 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/183662 | - |
dc.description.abstract | Recent experiments have indicated a strong influence of the substrate grain orientation on the self-ordering in anodic porous alumina. Anodic porous alumina with straight pore channels grown in a stable, self-ordered manner is formed on (001) oriented Al grain, while disordered porous pattern is formed on (101) oriented Al grain with tilted pore channels growing in an unstable manner. In this work, numerical simulation of the pore growth process is carried out to understand this phenomenon. The rate-determining step of the oxide growth is assumed to be the Cabrera-Mott barrier at the oxide/electrolyte (o/e) interface, while the substrate is assumed to determine the ratio b between the ionization and oxidation reactions at the metal/oxide (m/o) interface. By numerically solving the electric field inside a growing porous alumina during anodization, the migration rates of the ions and hence the evolution of the o/e and m/o interfaces are computed. The simulated results show that pore growth is more stable when b is higher. A higher b corresponds to more Al ionized and migrating away from the m/o interface rather than being oxidized, and hence a higher retained O:Al ratio in the oxide. Experimentally measured oxygen content in the self-ordered porous alumina on (001) Al is indeed found to be about 3% higher than that in the disordered alumina on (101) Al, in agreement with the theoretical prediction. The results, therefore, suggest that ionization on (001) Al substrate is relatively easier than on (101) Al, and this leads to the more stable growth of the pore channels on (001) Al. VC 2013 AIP Publishing LLC. | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.rights | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2013, v. 113 n. 20, article no. 204903 and may be found at https://doi.org/10.1063/1.4807295 | - |
dc.subject | Grain and twin boundaries | - |
dc.subject | Oxidation | - |
dc.subject | Electrolytes | - |
dc.subject | Powders, porous materials | - |
dc.title | Simulation and experiment of substrate aluminium grain orientation dependent self-ordering in anodic porous alumina | en_US |
dc.type | Article | en_US |
dc.identifier.email | Ng, KY: kycng@hku.hk | - |
dc.identifier.email | Ngan, AHW: hwngan@hkucc.hku.hk | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4807295 | - |
dc.identifier.scopus | eid_2-s2.0-84879101148 | - |
dc.identifier.hkuros | 214605 | - |
dc.identifier.volume | 113 | - |
dc.identifier.issue | 20 | - |
dc.identifier.spage | article no. 204903 | - |
dc.identifier.epage | article no. 204903 | - |
dc.identifier.isi | WOS:000320132100083 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0021-8979 | - |