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Conference Paper: Scanning probe microscopy-based characterization of ZnO nanorods

TitleScanning probe microscopy-based characterization of ZnO nanorods
Authors
Issue Date2010
Citation
Inec 2010 - 2010 3Rd International Nanoelectronics Conference, Proceedings, 2010, p. 438-439 How to Cite?
AbstractWe apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that - against the intuition - SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10-10} side facets. Further, we were able to acquire current-voltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode. ©2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/176211
References

 

DC FieldValueLanguage
dc.contributor.authorTeichert, Cen_US
dc.contributor.authorHou, Yen_US
dc.contributor.authorBeinik, Ien_US
dc.contributor.authorChen, Xen_US
dc.contributor.authorHsu, YFen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorAnwand, Wen_US
dc.contributor.authorBrauer, Gen_US
dc.date.accessioned2012-11-26T09:06:54Z-
dc.date.available2012-11-26T09:06:54Z-
dc.date.issued2010en_US
dc.identifier.citationInec 2010 - 2010 3Rd International Nanoelectronics Conference, Proceedings, 2010, p. 438-439en_US
dc.identifier.urihttp://hdl.handle.net/10722/176211-
dc.description.abstractWe apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that - against the intuition - SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10-10} side facets. Further, we were able to acquire current-voltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode. ©2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartofINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedingsen_US
dc.titleScanning probe microscopy-based characterization of ZnO nanorodsen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/INEC.2010.5424502en_US
dc.identifier.scopuseid_2-s2.0-77951664407en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951664407&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage438en_US
dc.identifier.epage439en_US
dc.identifier.scopusauthoridTeichert, C=7003900900en_US
dc.identifier.scopusauthoridHou, Y=16316471600en_US
dc.identifier.scopusauthoridBeinik, I=26040452000en_US
dc.identifier.scopusauthoridChen, X=35274291400en_US
dc.identifier.scopusauthoridHsu, YF=35078582800en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridAnwand, W=9432786300en_US
dc.identifier.scopusauthoridBrauer, G=7101650540en_US

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