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Conference Paper: Dielectric function of GaN: Model calculations

TitleDielectric function of GaN: Model calculations
Authors
Djurisic, Aleksandra BLi, EHerbert
Issue Date2000
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2000, v. 4078, p. 35-42 How to Cite?
DOI: http://dx.doi.org/10.1117/12.392178
AbstractIn this work we have modeled the optical functions of hexagonal GaN (corresponding to E⊥c) in the range from 1 eV to 10 eV using a modified critical points model. The difference between the model employed and the standard critical points model is that the exponent m is an adjustable parameter, and does not have fixed value depending on the type of critical point. Excellent agreement with the experimental data has been achieved over the entire investigated spectral range. Obtained relative rms errors equal 0.6% for the real part, and 2.0% for the imaginary part of the index of refraction.
Persistent Identifierhttp://hdl.handle.net/10722/176158
ISSN
0277-786X
2023 SCImago Journal Rankings: 0.152

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, Aleksandra Ben_US
dc.contributor.authorLi, EHerberten_US
dc.date.accessioned2012-11-26T09:06:30Z-
dc.date.available2012-11-26T09:06:30Z-
dc.date.issued2000en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2000, v. 4078, p. 35-42en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/176158-
dc.description.abstractIn this work we have modeled the optical functions of hexagonal GaN (corresponding to E⊥c) in the range from 1 eV to 10 eV using a modified critical points model. The difference between the model employed and the standard critical points model is that the exponent m is an adjustable parameter, and does not have fixed value depending on the type of critical point. Excellent agreement with the experimental data has been achieved over the entire investigated spectral range. Obtained relative rms errors equal 0.6% for the real part, and 2.0% for the imaginary part of the index of refraction.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titleDielectric function of GaN: Model calculationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurisic, Aleksandra B: dalek@hku.hken_US
dc.identifier.authorityDjurisic, Aleksandra B=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.392178-
dc.identifier.scopuseid_2-s2.0-0033685143en_US
dc.identifier.volume4078en_US
dc.identifier.spage35en_US
dc.identifier.epage42en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDjurisic, Aleksandra B=7004904830en_US
dc.identifier.scopusauthoridLi, EHerbert=7201410087en_US
dc.identifier.issnl0277-786X-

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