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Conference Paper: Design of wide bandwidth, flat phase Al xO y-GaAs DBR mirrors for vertical-cavity surface-emitting lasers

TitleDesign of wide bandwidth, flat phase Al xO y-GaAs DBR mirrors for vertical-cavity surface-emitting lasers
Authors
Rakic, ADMajewski, MLDjurisic, ABLi, EHElazar, JM
Issue Date1999
Citation
Proceedings Of The International Conference On Microelectronics, 1999, v. 2, p. 607-610 How to Cite?
AbstractIn this paper we develop expressions for the design of asymmetric, graded interface DBR mirrors by using the concept of characteristic matrices. This rigorous approach allowed for accurate solution of the wave equation (in both homogeneous and inhomogeneous layers) without any approximation. We investigate the two types of graded interface DBR mirrors for Vertical-Cavity Surface-Emitting Lasers: all-semiconductor DBR and oxide-semiconductor DBR. The advantages of using the wide bandwidth, flat phase oxide-semiconductor DBR mirrors over the all-semiconductor DBR mirrors have been presented.
Persistent Identifierhttp://hdl.handle.net/10722/176154

 

DC FieldValueLanguage
dc.contributor.authorRakic, ADen_US
dc.contributor.authorMajewski, MLen_US
dc.contributor.authorDjurisic, ABen_US
dc.contributor.authorLi, EHen_US
dc.contributor.authorElazar, JMen_US
dc.date.accessioned2012-11-26T09:06:29Z-
dc.date.available2012-11-26T09:06:29Z-
dc.date.issued1999en_US
dc.identifier.citationProceedings Of The International Conference On Microelectronics, 1999, v. 2, p. 607-610en_US
dc.identifier.urihttp://hdl.handle.net/10722/176154-
dc.description.abstractIn this paper we develop expressions for the design of asymmetric, graded interface DBR mirrors by using the concept of characteristic matrices. This rigorous approach allowed for accurate solution of the wave equation (in both homogeneous and inhomogeneous layers) without any approximation. We investigate the two types of graded interface DBR mirrors for Vertical-Cavity Surface-Emitting Lasers: all-semiconductor DBR and oxide-semiconductor DBR. The advantages of using the wide bandwidth, flat phase oxide-semiconductor DBR mirrors over the all-semiconductor DBR mirrors have been presented.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the International Conference on Microelectronicsen_US
dc.titleDesign of wide bandwidth, flat phase Al xO y-GaAs DBR mirrors for vertical-cavity surface-emitting lasersen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurisic, AB: dalek@hku.hken_US
dc.identifier.authorityDjurisic, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033299884en_US
dc.identifier.volume2en_US
dc.identifier.spage607en_US
dc.identifier.epage610en_US
dc.identifier.scopusauthoridRakic, AD=35618124100en_US
dc.identifier.scopusauthoridMajewski, ML=7103350030en_US
dc.identifier.scopusauthoridDjurisic, AB=7004904830en_US
dc.identifier.scopusauthoridLi, EH=7201410087en_US
dc.identifier.scopusauthoridElazar, JM=6603681404en_US

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