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Article: The influence of the implantation dose and energy on the electroluminescence of Si +-implanted amorphous SiO 2 thin films

TitleThe influence of the implantation dose and energy on the electroluminescence of Si +-implanted amorphous SiO 2 thin films
Authors
Ding, LChen, TPLiu, YYang, MWong, JILiu, KYZhu, FRFung, S
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2007, v. 18 n. 45, article no. 455306 How to Cite?
DOI: http://dx.doi.org/10.1088/0957-4484/18/45/455306
AbstractVisible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/175097
ISSN
0957-4484
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
WOS:000250139400009
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorWong, JIen_US
dc.contributor.authorLiu, KYen_US
dc.contributor.authorZhu, FRen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:49:11Z-
dc.date.available2012-11-26T08:49:11Z-
dc.date.issued2007en_US
dc.identifier.citationNanotechnology, 2007, v. 18 n. 45, article no. 455306en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://hdl.handle.net/10722/175097-
dc.description.abstractVisible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated. © IOP Publishing Ltd.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_US
dc.relation.ispartofNanotechnologyen_US
dc.titleThe influence of the implantation dose and energy on the electroluminescence of Si +-implanted amorphous SiO 2 thin filmsen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0957-4484/18/45/455306en_US
dc.identifier.scopuseid_2-s2.0-36049036295en_US
dc.identifier.hkuros139217-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36049036295&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume18en_US
dc.identifier.issue45en_US
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000250139400009-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridDing, L=21233704100en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridYang, M=24464683100en_US
dc.identifier.scopusauthoridWong, JI=15123438200en_US
dc.identifier.scopusauthoridLiu, KY=7404199968en_US
dc.identifier.scopusauthoridZhu, FR=7202254675en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.issnl0957-4484-

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