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Article: Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC
Title | Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC |
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Authors | |
Keywords | 6H-SiC Defects Irradiation LTPL |
Issue Date | 2006 |
Citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2006, v. 27 SUPPL., p. 11-13 How to Cite? |
Abstract | n-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7, 0.5, and 0.4 MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥ 0.5 MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478.6/483.3/486. lnm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500°C. However, the well-known D1-center is only detected for annealing temperatures over 700°C. By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior, it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect. |
Persistent Identifier | http://hdl.handle.net/10722/175059 |
ISSN | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhong, Z | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.contributor.author | Wang, O | en_HK |
dc.contributor.author | Yu, Z | en_HK |
dc.contributor.author | Yang, Z | en_HK |
dc.contributor.author | Xu, S | en_HK |
dc.contributor.author | Chen, X | en_HK |
dc.contributor.author | Ling, C | en_HK |
dc.contributor.author | Fung, H | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2012-11-26T08:49:02Z | - |
dc.date.available | 2012-11-26T08:49:02Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2006, v. 27 SUPPL., p. 11-13 | en_HK |
dc.identifier.issn | 0253-4177 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/175059 | - |
dc.description.abstract | n-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7, 0.5, and 0.4 MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥ 0.5 MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478.6/483.3/486. lnm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500°C. However, the well-known D1-center is only detected for annealing temperatures over 700°C. By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior, it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect. | en_HK |
dc.language | eng | en_US |
dc.relation.ispartof | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | en_HK |
dc.subject | 6H-SiC | en_HK |
dc.subject | Defects | en_HK |
dc.subject | Irradiation | en_HK |
dc.subject | LTPL | en_HK |
dc.title | Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Xu, S: sjxu@hku.hk | en_HK |
dc.identifier.email | Ling, C: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Xu, S=rp00821 | en_HK |
dc.identifier.authority | Ling, C=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-33847785374 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33847785374&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 27 | en_HK |
dc.identifier.issue | SUPPL. | en_HK |
dc.identifier.spage | 11 | en_HK |
dc.identifier.epage | 13 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Zhong, Z=8304932300 | en_HK |
dc.identifier.scopusauthorid | Gong, M=9273057400 | en_HK |
dc.identifier.scopusauthorid | Wang, O=13611875800 | en_HK |
dc.identifier.scopusauthorid | Yu, Z=7404347051 | en_HK |
dc.identifier.scopusauthorid | Yang, Z=9248580600 | en_HK |
dc.identifier.scopusauthorid | Xu, S=7404439005 | en_HK |
dc.identifier.scopusauthorid | Chen, X=26642908200 | en_HK |
dc.identifier.scopusauthorid | Ling, C=13310239300 | en_HK |
dc.identifier.scopusauthorid | Fung, H=16033324300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0253-4177 | - |