New type of Fano resonant tunneling via Anderson impurities in superlattice

Abstract

The spectrum of differential tunneling conductance in Si-doped GaAs/AlAs superlattice is measured at low electric fields. The conductance spectra feature a zero-bias peak and a low-bias dip at low temperatures. By taking into account the quantum interference between tunneling paths via superlattice miniband and via Coulomb blockade levels of impurities, we theoretically show that such a peak-dip structure is attributed to a Fano resonance where the peak always appears at the zero bias and the line shape is essentially described by a new function |ε̃|/|ε̄| + 1 with the asymmetry parameter q ≈ 0. As the temperature increases, the peak-dip structure fades out due to thermal fluctuations. Good agreement between experiment and theory enables us to distinguish the zero-bias resonance from the usual Kondo resonance. © EDP Sciences.