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Article: Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy
Title | Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy |
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Authors | |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2006, v. 88 n. 22, article no. 221916 How to Cite? |
Abstract | During Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/175017 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Y | en_US |
dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Wu, HS | en_US |
dc.contributor.author | Tong, SY | en_US |
dc.date.accessioned | 2012-11-26T08:48:47Z | - |
dc.date.available | 2012-11-26T08:48:47Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.citation | Applied Physics Letters, 2006, v. 88 n. 22, article no. 221916 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/175017 | - |
dc.description.abstract | During Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed. © 2006 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.email | Wu, HS: hswu@hkucc.hku.hk | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.identifier.authority | Wu, HS=rp00813 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.2209210 | en_US |
dc.identifier.scopus | eid_2-s2.0-33744814618 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33744814618&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 88 | en_US |
dc.identifier.issue | 22 | en_US |
dc.identifier.spage | article no. 221916 | - |
dc.identifier.epage | article no. 221916 | - |
dc.identifier.isi | WOS:000238001900034 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Liu, Y=26643293600 | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Wu, HS=7405584367 | en_US |
dc.identifier.scopusauthorid | Tong, SY=24512624800 | en_US |
dc.identifier.issnl | 0003-6951 | - |