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Article: Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire
Title | Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire |
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Authors | |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2006, v. 88 n. 16, article no. 161113 How to Cite? |
Abstract | At room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/175010 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Yang, H | en_US |
dc.contributor.author | Xu, SJ | en_US |
dc.contributor.author | Li, Q | en_US |
dc.contributor.author | Zhang, J | en_US |
dc.date.accessioned | 2012-11-26T08:48:45Z | - |
dc.date.available | 2012-11-26T08:48:45Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.citation | Applied Physics Letters, 2006, v. 88 n. 16, article no. 161113 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/175010 | - |
dc.description.abstract | At room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal. © 2006 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_US |
dc.identifier.authority | Xu, SJ=rp00821 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.2197310 | en_US |
dc.identifier.scopus | eid_2-s2.0-33646171364 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33646171364&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 88 | en_US |
dc.identifier.issue | 16 | en_US |
dc.identifier.spage | article no. 161113 | - |
dc.identifier.epage | article no. 161113 | - |
dc.identifier.isi | WOS:000236969300013 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Yang, H=35493514000 | en_US |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_US |
dc.identifier.scopusauthorid | Li, Q=7405861869 | en_US |
dc.identifier.scopusauthorid | Zhang, J=36067089700 | en_US |
dc.identifier.issnl | 0003-6951 | - |