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Article: Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD
Title | Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD |
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Authors | |
Issue Date | 2005 |
Publisher | Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL |
Citation | Chinese Physics Letters, 2005, v. 22 n. 5, p. 1214-1217 How to Cite? |
Abstract | Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data, and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al + ions, are also investigated. Studies on Al + implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al + implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region. © 2005 Chinese Physical Society and IOP Publishing Ltd. |
Persistent Identifier | http://hdl.handle.net/10722/174956 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.815 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hu, YF | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2012-11-26T08:48:21Z | - |
dc.date.available | 2012-11-26T08:48:21Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Chinese Physics Letters, 2005, v. 22 n. 5, p. 1214-1217 | en_HK |
dc.identifier.issn | 0256-307X | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174956 | - |
dc.description.abstract | Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data, and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al + ions, are also investigated. Studies on Al + implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al + implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region. © 2005 Chinese Physical Society and IOP Publishing Ltd. | en_HK |
dc.language | eng | en_US |
dc.publisher | Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL | en_HK |
dc.relation.ispartof | Chinese Physics Letters | en_HK |
dc.title | Variable energy positron annihilation spectroscopy of GaN grown on sapphire substrates with MOCVD | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/0256-307X/22/5/053 | en_HK |
dc.identifier.scopus | eid_2-s2.0-24144431572 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-24144431572&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 22 | en_HK |
dc.identifier.issue | 5 | en_HK |
dc.identifier.spage | 1214 | en_HK |
dc.identifier.epage | 1217 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Hu, YF=7407119615 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.citeulike | 163005 | - |
dc.identifier.issnl | 0256-307X | - |