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Article: Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

TitleSequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
Authors
Liu, JGornik, EXu, SZheng, H
KeywordsGaas/Alas
Landau Level
Superlattices
Transport
Tunnelling
Issue Date1998
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
Microelectronic Engineering, 1998, v. 43-44, p. 349-354 How to Cite?
AbstractElectron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. © 1998 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/174887
ISSN
0167-9317
2023 Impact Factor: 2.6
2023 SCImago Journal Rankings: 0.503
ISI Accession Number ID
WOS:000075867000050
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Jen_US
dc.contributor.authorGornik, Een_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorZheng, Hen_US
dc.date.accessioned2012-11-26T08:47:58Z-
dc.date.available2012-11-26T08:47:58Z-
dc.date.issued1998en_US
dc.identifier.citationMicroelectronic Engineering, 1998, v. 43-44, p. 349-354en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/10722/174887-
dc.description.abstractElectron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. © 1998 Elsevier Science B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.subjectGaas/Alasen_US
dc.subjectLandau Levelen_US
dc.subjectSuperlatticesen_US
dc.subjectTransporten_US
dc.subjectTunnellingen_US
dc.titleSequential resonant tunnelling through Landau levels in GaAs/AlAs superlatticesen_US
dc.typeArticleen_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0346940328en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0346940328&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume43-44en_US
dc.identifier.spage349en_US
dc.identifier.epage354en_US
dc.identifier.isiWOS:000075867000050-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridLiu, J=36077311800en_US
dc.identifier.scopusauthoridGornik, E=7103124093en_US
dc.identifier.scopusauthoridXu, S=7404439005en_US
dc.identifier.scopusauthoridZheng, H=7403440708en_US
dc.identifier.issnl0167-9317-

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